发明名称 |
Method of forming PID protection diode for SOI wafer |
摘要 |
An integrated microelectronics semiconductor circuit fabricated on a silicon-on-insulator (SOI) type substrate can be protected from unwanted current surges and excessive heat buildup during fabrication by means of a heat-dissipating, protective plasma-induced-damage (PID) diode. The present invention fabricates such a protective diode as a part of the overall scheme in which the transistor devices are formed.
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申请公布号 |
US2002022328(A1) |
申请公布日期 |
2002.02.21 |
申请号 |
US20010946981 |
申请日期 |
2001.09.06 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
ANG TING CHEONG;QUEK SHYUE FONG;LOONG SANG YEE;SONG JUN |
分类号 |
H01L21/84;H01L27/12;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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