发明名称 |
Triple self-aligned split-gate non-volatile memory device |
摘要 |
A method for fabricating a triple self-aligned non-volatile memory device is disclosed. The method includes forming isolation oxide on a substrate. A plurality of floating gates are formed by depositing and self-aligning a first polysilicon layer to the isolation oxide. A common source area is then defined on the substrate between the floating gates. A second polysilicon layer is deposited over the common source area and self-aligned with respect to the isolation oxide. A third polysilicon layer is deposited adjacent to the plurality of floating gates. A plurality of select gates are then formed by self-aligning the third polysilicon layer to the isolation oxide. Furthermore, at least one drain area is defined on the substrate.
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申请公布号 |
US2002022322(A1) |
申请公布日期 |
2002.02.21 |
申请号 |
US20010881245 |
申请日期 |
2001.06.08 |
申请人 |
LIU CHUN-MAI;SU KUNG-YEN;CHAN KAI-MAN;KORDESCH ALBERT V. |
发明人 |
LIU CHUN-MAI;SU KUNG-YEN;CHAN KAI-MAN;KORDESCH ALBERT V. |
分类号 |
G11C11/34;H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/76;(IPC1-7):G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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