发明名称 |
Polishing composition |
摘要 |
The present invention relates to a polishing composition comprising 30 to 99 wt % of deionized water, 0.1 to 50 wt % of powder of metallic oxide and 0.01 to 20 wt % of cyclic amine. This polishing composition can be used in a chemical mechanical polishing of thin films in integrated circuit manufacturing and has an effect of minimizing the occurrence of microscratches on the thin film after polishing. Thereby it can be applied to the manufacturing process of highly integrated circuits such as Shallow Trench Isolation.
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申请公布号 |
US2002022369(A1) |
申请公布日期 |
2002.02.21 |
申请号 |
US20010850209 |
申请日期 |
2001.05.07 |
申请人 |
LEE KIL SUNG;LEE JAE SEOK;KIM SEOK JIN;LEE YOUNG KI;CHANG TU WON |
发明人 |
LEE KIL SUNG;LEE JAE SEOK;KIM SEOK JIN;LEE YOUNG KI;CHANG TU WON |
分类号 |
C09G1/02;H01L21/306;H01L21/3105;H01L21/321;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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