| 摘要 |
A <28>Sin/<30>Sim supelattices (10) is grown on a substrate (11) where the thicknesses of the <28>Si and <30>Si layers n and m, respectively, is in the unit of atomic layers. The <28>Sin/<30>Sin superlattice (10) is composed of alternating layers of isotopically enriched <28>Si and <30>Si layers in the crystallographic direction <111>. The number of periods, that is, the number of <28>Si and <30>Si layer pairs in this embodiment, is two. The superlattice (10) is grown in a direction that is not parallel to the direction of the dominant intervalley electron scattering. The most preferred direction of the isotope superlattice for the case of Si is <111> since it has the same angles to the directions (A-B, C-C'', C'-C'''). |
