LOW TEMPERATURE OXIDIZING METHOD OF MAKING A LAYERED SUPERLATTICE MATERIAL

摘要

A thin film of precursor for forming a layered superlattice material (124, 226, 624) is applied (324, 424) to an integrated circuit substrate (122, 224, 500, 622), then a strong oxidizing agent is applied (328, 330, 426, 428) at low temperature in a range of from 100 DEG C to 300 DEG C to the precursor thin film, thereby forming a metal oxide thin film. The strong oxidizing agent may be liquid or gaseous. An example of a liquid strong oxidizing agent is hydrogen peroxide. An example of a gaseous strong oxidizing agent is ozone. The metal oxide thin film is crystallized by annealing (336, 338, 432, 434) at elevated temperature in a range of from 500 DEG C to 700 DEG C, preferably not exceeding 650 DEG C, for a time period in a range of from 30 minutes to two hours. Annealing is conducted in an oxygen-containing atmosphere, preferably including water vapor. Treatment (332, 430) by ultraviolet (UV) radiation may precede annealing. RTP in a range of from 500 DEG C to 700 DEG C may precede annealing.