发明名称 WIRING THROUGH TERMINAL VIA FUSE WINDOW
摘要 <p>A semiconductor device, in accordance with the present invention, includes a plurality of fuses (106) disposed on a same level in a fuse bank (104). A plurality of conductive lines (408) are routed through the fuse bank in between the fuses. A terminal via window (405) is formed in a passivation layer over the plurality of conductive lines and over the plurality of fuses, the terminal via window being formed to expose the fuses in the fuse bank.</p>
申请公布号 WO2002015269(A2) 申请公布日期 2002.02.21
申请号 US2001023171 申请日期 2001.07.23
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