| 摘要 |
<p>A method of producing a silicon wafer for producing by a CZ method a silicon wafer from a silicon single crystal pulled up after doping nitrogen, and heat treating the silicon wafer, wherein a growing-up is effected under a condition that a ratio V/G of a silicon single crystal pulling-up velocity V(mm/min)to a temperature gradient G(K/mm) at the solid-liquid interface is 0.175-0.225 mm2/Kmin within a range of at least 90% in a pulled-up crystal diameter direction; and a silicon wafer produced by this production method, whereby the method of producing a silicon wafer and such a silicon wafer are suitable for producing an anneal wafer having sufficient non-defect layers and BMD density uniformly within a plane while restricting in-plane variations in non-defect layer encountered in an anneal wafer after heat treating ( that is in-plane variations in grown-in defect size) and in-plane variations in BMD density after heat treating such as precipitation heat treating and device heat treating.</p> |
