发明名称 |
Semiconductor device allowing external setting of internal power supply voltage generated by a voltage down converter at the time of testing |
摘要 |
In a voltage down converter, an internal power supply potential can be made equal to an external power supply potential by rendering an output driving transistor included in differential amplifiers conductive in accordance with an activation of a burn-in mode detection signal. The differential amplifiers include a comparison circuit having an output changed to an inactive state in response to the burn-in mode detection signal and a transistor setting a level of a gate voltage of the drive transistor to a fixed level.
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申请公布号 |
US2002021602(A1) |
申请公布日期 |
2002.02.21 |
申请号 |
US20000503719 |
申请日期 |
2000.02.14 |
申请人 |
MORISHITA FUKASHI |
发明人 |
MORISHITA FUKASHI |
分类号 |
G11C11/413;G11C5/14;G11C11/401;G11C11/407;G11C29/06;G11C29/12;(IPC1-7):G11C29/00 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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