发明名称 |
Method of preventing semiconductor layers from bending and seminconductor device formed thereby |
摘要 |
Disclosed herein are various methods for preventing bending of a patterned SOI layer during trench sidewall oxidation, the methods comprising providing a patterned SOI layer having at least one trench, said patterned SOI layer disposed upon an underlying buried silicon oxide layer; and blocking diffusion of oxygen between said patterned SOI and buried silicon oxide layer.
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申请公布号 |
US2002022308(A1) |
申请公布日期 |
2002.02.21 |
申请号 |
US20010861443 |
申请日期 |
2001.05.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN DONG-HO;KANG HO-KYU;BAE GEUM-JONG |
分类号 |
H01L21/76;H01L21/265;H01L21/316;H01L21/762;H01L27/12;H01L29/786;(IPC1-7):H01L21/00;H01L21/84;H01L21/823;H01L21/336;H01L21/331;H01L21/822 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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