| 摘要 |
It is an object of the present invention to reduce a number of deflection awaiting and a connection error between shots by scanning and exposing a formed beam having a large area. To achieve the object, a continuous scanning deflector and a scan limiter are added to a variable forming type electron beam column and the drawing is performed such that a state in which the electron beam is limited by the scan limiter is continuous to a state in which the electron beam is irradiated on a face of a sample. According to this structure, the number of deflection awaiting and the connection error between shots are reduced and further, a high-speed and highly accurate drawing of a 45° slanted figure is made possible.
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