| 摘要 |
<p>A 28Sin/30Sim supelattices (10) is grown on a substrate (11) where the thicknesses of the ?28Si and 30¿Si layers n and m, respectively, is in the unit of atomic layers. The 28Sin/30Sin superlattice (10) is composed of alternating layers of isotopically enriched ?28Si and 30¿Si layers in the crystallographic direction <111>. The number of periods, that is, the number of ?28Si and 30¿Si layer pairs in this embodiment, is two. The superlattice (10) is grown in a direction that is not parallel to the direction of the dominant intervalley electron scattering. The most preferred direction of the isotope superlattice for the case of Si is <111> since it has the same angles to the directions (A-B, C-C'', C'-C''').</p> |
