| 摘要 |
<p>A buried grid solar cell is manufactured by a process for metallising one or more metal contacts of a buried grid solar cell having a body of doped semiconductor material, wherein the electrical contact(s) is/are provided by conducting material being arranged in a pattern of one or more grooves into the semiconductor material with the following steps: applying a seed layer on the exposed semiconductor material in the grooves by elecroless plating followed by sintering, applying an electrically conducting base layer by electroless plating on top of said seed layer and filling the grooves with an electrically conducting contact forming material by electrolytic plating using a conventional electrolytic bath further comprising a levelling additive and a suppressing additive and using substantially constant cell voltage.</p> |
