| 摘要 |
<p>A method for manufacturing a semiconductor device wherein a circular opening is made in an interlayer insulating film, a lower ruthenium electrode is formed by low-pressure remote sputtering, and a ruthenium film is deposited on the side wall of a deep hole. After the ruthenium film deposited on the top face of the interlayer insulating film is removed, a dielectric body of, for example, a tantalum pentoxide film is deposited. Thereafter an upper ruthenium electrode of, for example, Ru (EtCp) 2 is deposited by chemical vapor deposition in which the material is transferred by bubbling. Under a condition (reaction rate-limiting condition) that the rate of deposition of the ruthenium film depends on the forming temperature, the upper ruthenium electrode with high coverage can be formed. According to the invention, a microminiaturized trench capacitor is provided.</p> |
