发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device wherein a circular opening is made in an interlayer insulating film, a lower ruthenium electrode is formed by low-pressure remote sputtering, and a ruthenium film is deposited on the side wall of a deep hole. After the ruthenium film deposited on the top face of the interlayer insulating film is removed, a dielectric body of, for example, a tantalum pentoxide film is deposited. Thereafter an upper ruthenium electrode of, for example, Ru (EtCp) 2 is deposited by chemical vapor deposition in which the material is transferred by bubbling. Under a condition (reaction rate-limiting condition) that the rate of deposition of the ruthenium film depends on the forming temperature, the upper ruthenium electrode with high coverage can be formed. According to the invention, a microminiaturized trench capacitor is provided.
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申请公布号 |
WO0215275(A1) |
申请公布日期 |
2002.02.21 |
申请号 |
WO2000JP05399 |
申请日期 |
2000.08.11 |
申请人 |
HITACHI, LTD.;MATSUI, YUICHI;HIRATANI, MASAHIKO;SHIMAMOTO, YASUHIRO;NABATAME, TOSHIHIDE |
发明人 |
MATSUI, YUICHI;HIRATANI, MASAHIKO;SHIMAMOTO, YASUHIRO;NABATAME, TOSHIHIDE |
分类号 |
C23C14/04;C23C14/16;C23C16/18;H01L21/02;H01L21/768;H01L21/8242;H01L21/8246;H01L27/108;(IPC1-7):H01L27/108;H01L21/824 |
主分类号 |
C23C14/04 |
代理机构 |
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