Method for setting the breakover voltage of a thyristor

摘要

The effective doping profile of a finished thyristor is altered with helium ions radiated into a region provided for triggering the thyristor in such a way that the breakover voltage for overhead ignition is increased or reduced. Doping profile changes made in the cathode side half of the anode side base provide effective results, e.g. in the vicinity of the pn junction between the anode side and the cathode side base. The helium ions generate acceptor-type states that lower the effective n doping.