| 摘要 |
PURPOSE: To improve adhesive force between a rare metal layer and an insulating layer. CONSTITUTION: This method for manufacturing a semiconductor device contains a process wherein a capacitor dielectric layer composed of oxide high dielectrics or oxide ferroelectrics which have high permittivity is deposited on a semiconductor substrate which has a lower side electrode composed of rare metal on the surface, a process wherein a laminated layer containing an upper side electrode layer composed of rare metal and an adhesive layer is formed on the capacitor dielectric layer, a process for patterning the laminated layer, a process wherein the patterned laminated layer is chemically treated and a surface layer of the laminated layer is eliminated, and a process wherein an interlayer insulating layer is formed on the semiconductor substrate covering the laminated layer which was chemically treated.
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