发明名称 |
Configuration and method for the low-loss writing of an MRAM |
摘要 |
A configuration and method for low-loss writing of an MRAM includes setting voltages at bit lines and word lines such that the voltage across the memory cells between a selected word/bit line and the individual bit line/word lines is minimal. A voltage drop occurs on a selected word/bit line connected to a particular memory cell when writing into the memory cell and voltages at the bit/word lines are set to minimize a cell voltage across the memory cells between a selected word/bit line and individual bit/word lines. A voltage drop occurs on a selected word/bit line connected to a particular memory cell when writing into the particular cell, and, when a voltage V1 and a voltage V2<V1 are present at a respective end of the selected word line/bit lines, the cell field is configured to have all of the bit/word lines set to voltages (V1+V2)/2 and to have a maximum cell voltage of ±(V1-V2)/2.
|
申请公布号 |
US2002021543(A1) |
申请公布日期 |
2002.02.21 |
申请号 |
US20010922471 |
申请日期 |
2001.08.03 |
申请人 |
GOGL DIETMAR;KANDOLF HELMUT;LAMMERS STEFAN |
发明人 |
GOGL DIETMAR;KANDOLF HELMUT;LAMMERS STEFAN |
分类号 |
G11C11/14;G11C5/06;G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01H47/18 |
主分类号 |
G11C11/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|