发明名称 |
CIRCUIT SELECTION OF MAGNETIC MEMORY CELLS AND RELATED CELL STRUCTURES |
摘要 |
<p>A ferromagnetic thin-film based digital memory having a plurality of bit structures interconnected with manipulation circuitry having a plurality of transistors so that each bit structure has transistors electrically coupled thereto that selectively substantially prevents current in at least one direction along a current path through that bit structure and permits selecting a direction of current flow (Ixm-1, Ixm, Ixm+1, Iyn, Iyn+1) through the bit structure if current is permitted to be established therein. A bit structure has a nonmagnetic intermediate layer with two major surfaces on opposite sides thereof and a memory film of an anisotropic ferromagnetic material on each of the intermediate layer major surfaces with an electrically insulative intermediate layer is provided on the memory film on which a magnetization reference layer is provided having a fixed magnetization direction.</p> |
申请公布号 |
WO0215171(A1) |
申请公布日期 |
2002.02.21 |
申请号 |
WO2001US25727 |
申请日期 |
2001.08.16 |
申请人 |
NVE CORPORATION |
发明人 |
DAUGHTON, JAMES, M.;POHM, ARTHUR, V. |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/22;(IPC1-7):G11B5/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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