发明名称 Plating apparatus and plating method for substrate
摘要 This invention relates, particularly, to a plating method and apparatus for a substrate for uses, such as the filling of a metal, e.g., copper (Cu), into a fine interconnection pattern (recesses) formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 for horizontally holding and rotating a substrate with its surface to be plated facing upward, a seal material 90 for contacting a peripheral edge portion of the surface, to be plated, of the substrate held by the substrate holding portion 36, and sealing the peripheral edge portion in a watertight manner, a cathode electrode 88 for passing an electric current upon contact with the substrate, a cathode portion 38 rotating integrally with the substrate holding portion 36, an electrode arm portion 30 placed above the cathode portion 38 so as to be movable horizontally and vertically and having an anode 98 face-down, and plating liquid pouring means for pouring a plating liquid into a space between the surface, to be plated, of the substrate held by the substrate holding portion 36 and the anode 98 of the electrode arm portion 30 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.
申请公布号 US2002020627(A1) 申请公布日期 2002.02.21
申请号 US20000742110 申请日期 2000.12.22
申请人 KUNISAWA JUNJI;ODAGAKI MITSUKO;MAKINO NATSUKI;MISHIMA KOJI;NAKAMURA KENJI;INOUE HIROAKI;KIMURA NORIO;MATSUDA TETSUO;KANEKO HISASHI;HAYASAKA NOBUO;OKUMURA KATSUYA;TSUJIMURA MANABU;MORITA TOSHIYUKI 发明人 KUNISAWA JUNJI;ODAGAKI MITSUKO;MAKINO NATSUKI;MISHIMA KOJI;NAKAMURA KENJI;INOUE HIROAKI;KIMURA NORIO;MATSUDA TETSUO;KANEKO HISASHI;HAYASAKA NOBUO;OKUMURA KATSUYA;TSUJIMURA MANABU;MORITA TOSHIYUKI
分类号 C23C18/16;C25D7/12;C25D17/12;C25D17/14;H01L21/00;H01L21/288;H01L21/768;H05K3/42;(IPC1-7):C25D5/00;C25D5/34;C25D5/48;C25D17/00 主分类号 C23C18/16
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