| 摘要 |
An object of the present invention is forming a concave portion (including a penetration hole) in a semiconductor substrate by a sandblast method without causing electrostatic breakdown. In order to achieve the object, in a wafer in which at least two chips are formed, metal films are formed at least in the vicinity of circumferential portions of regions in which the concave portions (including penetration holes) of the respective chips are to be formed. In addition, the metal films are extended from the vicinity of the circumferential portions to ends of the respective corresponding chips. Further, the metal films are connected with each other through regions between the chips. The entire surface of the wafer including the metal films is masked, except for the regions in which the concave portions of the respective chips are to be formed. At least a portion of the metal films is grounded and then the concave portions are formed in the respective chips formed on the wafer by the sandblast method.
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