发明名称 USE OF PULSED VOLTAGE IN A PLASMA REACTOR
摘要 A method and apparatus for providing a positive voltage spike to a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.
申请公布号 WO0215222(A2) 申请公布日期 2002.02.21
申请号 WO2001US25742 申请日期 2001.08.17
申请人 MICRON TECHNOLOGY, INC. 发明人 DONOHOE, KEVIN, G.
分类号 H05H1/46;H01J37/32;H01L21/3065 主分类号 H05H1/46
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