Method for fabricating gate oxide film of semiconductor device

摘要

The present invention relates to a method for fabricating a semiconductor device, and more particularly, to a method for fabricating a gate oxide film of a semiconductor device by which semiconductor devices having different electrical characteristics can be implemented in the same chip. The present invention provides a method for fabricating a gate oxide film of a semiconductor device which includes the steps of: forming a screen oxide film on the top surface of a semiconductor substrate; forming an ion implantation mask on parts of the top surface of the screen oxide film; implanting nitrogen ions into the semiconductor substrate using the ion implantation mask; removing the ion implantation mask and the screen oxide film; forming an oxide film on the top surface of the semiconductor substrate; and annealing the semiconductor substrate in a N2O or O3 atmosphere.