| 摘要 |
Damaged low-density silicon oxide-based films having an Si-O backbone are repaired using a method for driving a self-limiting healing process. According to an example embodiment of the present invention, a deposition precursor and an oxidizer are introduced to a damaged side wall region of a low-density silicon oxide-based film. The unstable damaged portion of the film reacts with the deposition precursor and a thin repair film is grown within the interfacial layer of the damaged film. The repair film provides a strengthened interface, protects the underlying sensitive material from further chemical damage, and can improve the ability to integrate the film.
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