发明名称 Process for fabricating a capacitor within an integrated circuit, and corresponding integrated circuit
摘要 A production of a capacitor includes the simultaneous production, in at least part of an intertrack insulating layer (3) associated with a given metallization level, on the one hand, of the two electrodes (50, 70) and of the dielectric layer (60) of the capacitor and, on the other hand, of a conducting trench (41) which laterally extends the lower electrode of the capacitor, is electrically isolated from the upper electrode and has a transverse dimension smaller than the transverse dimension of the capacitor, and the production, in the interlevel insulating layer (8) covering the intertrack insulating layer, of two conducting pads (80, 81) which come into contact with the upper electrode of the capacitor and with the conducting trench, respectively.
申请公布号 US2002022333(A1) 申请公布日期 2002.02.21
申请号 US20010932513 申请日期 2001.08.17
申请人 STMICROELECTRONICS S.A. 发明人 MORAND YVES;PELLOIE JEAN-LUC
分类号 H01L27/04;H01L21/02;H01L21/768;H01L21/822;(IPC1-7):H01L21/20;H01L29/00 主分类号 H01L27/04
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