| 发明名称 |
VERFAHREN ZUR HERSTELLUNG VON SILIZIUMKARBIDKRISTALL MIT GERINGEM WIDERSTAND |
| 摘要 |
A nitrogen doped single crystal silicon carbide boule is grown by the physical vapor transport process by introducing nitrogen gas into the growth furnace. During the growth process the pressure within the furnace is maintained at a constant value, Po, where Po</=100 Torr. This is accomplished by measuring the pressure within the furnace and providing the pressure measurement to a process controller which regulates the nitrogen introduction as nitrogen gas is incorporated into the crystal structure. The partial pressure of the nitrogen may be selected to be at a value between 1 and Po. If the desired partial pressure is less than Po, an inert gas is added to make up the difference. |
| 申请公布号 |
DE69803283(D1) |
申请公布日期 |
2002.02.21 |
| 申请号 |
DE1998603283 |
申请日期 |
1998.05.08 |
| 申请人 |
NORTHROP GRUMMAN CORP., LOS ANGELES |
发明人 |
BARRETT, L.;HOPKINS, H.;MCHUGH, P.;HOBGOOD, MCDONALD |
| 分类号 |
C30B23/00 |
主分类号 |
C30B23/00 |
| 代理机构 |
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