| 摘要 |
PURPOSE: To provide a silicon carbide-manufacturing method that enables doping under improved controllability without restricting an impurity source, the concentration of dopant, the depth of a doping range, or the like, and can achieve manufacture under sufficient productivity, silicon carbide, and a semiconductor device. CONSTITUTION: A unit process is repeated for 2000 times, thus forming a cubic silicon carbide film by the epitaxial growth on a substrate 4 (a silicon substrate). In the unit process, a single crystal silicon substrate 4 is installed on a plate 3 in a CVD device 10 for heating to 1200°C by a heating means 5, the inside of a film-formed chamber 1 is set to H2 gas atmosphere, an SiH2Cl2 gas is supplied for five seconds (formation a silicon layer), the SiH2Cl2 gas is stopped for supply an N2 gas for five seconds (N (donor) doping to the silicon layer), and the N2 gas is stopped for supplying a C2H2 gas for five seconds (carbonization of the N-doped silicon layer). |
