| 发明名称 |
Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor |
| 摘要 |
The present invention relates to a method of forming a very shallow source-drain (S/D) extension while simultaneously highly doping a very narrow polysilicon gate through to the gate dielectric interface. The invention also relates to the resulting semiconductor.
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| 申请公布号 |
US2002022354(A1) |
申请公布日期 |
2002.02.21 |
| 申请号 |
US20010871926 |
申请日期 |
2001.06.01 |
| 申请人 |
FURUKAWA TOSHIHARU;HAKEY MARK C.;HOLMES STEVEN J.;HORAK DAVID V. |
发明人 |
FURUKAWA TOSHIHARU;HAKEY MARK C.;HOLMES STEVEN J.;HORAK DAVID V. |
| 分类号 |
H01L29/78;H01L21/223;H01L21/28;H01L21/32;H01L21/336;H01L21/8238;H01L27/092;(IPC1-7):H01L21/320 |
主分类号 |
H01L29/78 |
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