| 摘要 |
<p>A substrate processing device, comprising a processing container, first and second processing gas feed ports provided in the processing container so as to be opposed to each other across a processed substrate, and slit-like first and second discharge ports provided in the first and second processing gas feed ports so as to be opposed to each other across the processed substrate and generally orthogonal to the flows of first and second processing gases, wherein the first processing gas is allowed to flow from the first processing gas feed port to the first discharge gas port along the surface of the processed substrate and sucked to the surface of the processed substrate, and then the second processing gas is allowed to flow from the second processing gas feed port to the second discharge port along the surface of the processed substrate, whereby, because the second processing gas reacts the sucked first processing gas molecules sucked, a high dielectric substance film of one-molecule layer can be formed.</p> |
