| 摘要 |
PURPOSE: To provide a technique for suppressing an unevenness of a threshold value voltage Vth of a MISFET for constituting an SRAM by reducing an area of a semiconductor integrated circuit device such as, for example, the SRAM. CONSTITUTION: A method for manufacturing the semiconductor integrated circuit device comprises the steps of disposing a p-channel MISFET forming region at distances S1 and S2 of a product of a thickness H of a resist film by tan of an ion implanting angle &thgr; from ends PRn1 and PRn2 of the resist films Rn1 and Rn2 formed on an n-channel MISFET forming region (p-type well 3) when forming pocket ion regions PKn1 and PKn2 on a p-channel MISFET forming region (n-type well 4) for constituting the SRAM by an oblique ion implanting method, and obliquely ion implanting. As a result, since the impurity from one direction ((3) or (4)) of the impurity to be implanted from four directions, variations of an impurity concentration of the pocket ion region PKn2 can be suppressed.
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