| 摘要 |
PURPOSE: A substrate processing method and a device thereof are provided to be capable of preventing patterns from being deformed or broken and hardening resist after developing process, and improving adhesion thereof to a wafer. CONSTITUTION: A developing process of a photo-resist coated on a wafer(W) is performed, cleaning developing solution by a cleaning solution then transferring the wafer(W) to the electron beam radiation unit(30) before the rinsing solution and the resist dries out. A radiation chamber is replaced with a helium gas to form a predetermined degree of vacuum or atmospheric pressure. An electron beam is radiated and the front face of the wafer(W) is heated for a predetermined period of time. In this method, deformation and breaking of a pattern caused by drying after the development can be prevented.
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