发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
As wiring patterns in a region for connecting two line & space pattern sets having different line & space widths on a semiconductor substrate, even-numbered line patterns in a region having a smaller line & space width are connected to line patterns in a region having a larger line & space width and thicken their line widths stepwise in the middle of the lengthwise direction, and odd-numbered line patterns in the region having the smaller line & space width terminate at different positions in a connection region. Upon forming a fine wiring pattern on the connection region using photolithography, the resolution and depth of focus can be suppressed from impairing.
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申请公布号 |
US2002022311(A1) |
申请公布日期 |
2002.02.21 |
申请号 |
US20010920859 |
申请日期 |
2001.08.03 |
申请人 |
TAKEUCHI YUJI;ARAI FUMITAKA |
发明人 |
TAKEUCHI YUJI;ARAI FUMITAKA |
分类号 |
H01L21/027;H01L21/8247;H01L23/528;H01L27/115;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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