发明名称 DENSE ARRAYS AND CHARGE STORAGE DEVICES, AND METHODS FOR MAKING SAME
摘要 There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
申请公布号 WO0215277(A2) 申请公布日期 2002.02.21
申请号 WO2001US25092 申请日期 2001.08.13
申请人 MATRIX SEMICONDUCTOR, INC.;LEE, THOMAS, H.;SUBRAMANIAN, VIVEK;CLEEVES, JAMES, M.;WALKER, ANDREW, J.;PETTI, CHRISTOPHER;KOUZNETZOV, IGOR, G.;JOHNSON, MARK, G.;FARMWALD, PAUL, M.;HERNER, BRAD 发明人 LEE, THOMAS, H.;SUBRAMANIAN, VIVEK;CLEEVES, JAMES, M.;WALKER, ANDREW, J.;PETTI, CHRISTOPHER;KOUZNETZOV, IGOR, G.;JOHNSON, MARK, G.;FARMWALD, PAUL, M.;HERNER, BRAD
分类号 H01L21/20;H01L21/336;H01L21/822;H01L21/8246;H01L21/8247;H01L27/06;H01L27/10;H01L27/112;H01L27/115;H01L27/12;H01L29/423;H01L29/786;H01L29/788;H01L29/792;H01L29/861 主分类号 H01L21/20
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