发明名称 MEMORY DEVICE HAVING CAPACITOR ENCAPSULATED BY MULTILAYER INCLUDING DUAL LAYER COMPOSED OF THE SAME MATERIAL AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A memory device having a capacitor encapsulated by a multilayer including a dual layer composed of the same material is provided to control deterioration of a dielectric layer of the capacitor, by using an encapsulation layer composed of a passivation layer and a blocking layer which are composed of the same material. CONSTITUTION: The capacitor has a lower electrode(34), an upper electrode(38) and the dielectric layer(36) interposed between the lower electrode and the upper electrode. A multilayered encapsulation layer includes the first blocking layer(48) and the first passivation layer(42) formed on the first blocking layer, surrounding the capacitor and composed of the same material.
申请公布号 KR20020013154(A) 申请公布日期 2002.02.20
申请号 KR20000046615 申请日期 2000.08.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN, HYEONG GEUN;CHO, HAK JU
分类号 H01L27/105;H01L21/02;H01L21/8246;H01L27/108;H01L27/115;(IPC1-7):H01L27/108 主分类号 H01L27/105
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