发明名称 |
MEMORY DEVICE HAVING CAPACITOR ENCAPSULATED BY MULTILAYER INCLUDING DUAL LAYER COMPOSED OF THE SAME MATERIAL AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A memory device having a capacitor encapsulated by a multilayer including a dual layer composed of the same material is provided to control deterioration of a dielectric layer of the capacitor, by using an encapsulation layer composed of a passivation layer and a blocking layer which are composed of the same material. CONSTITUTION: The capacitor has a lower electrode(34), an upper electrode(38) and the dielectric layer(36) interposed between the lower electrode and the upper electrode. A multilayered encapsulation layer includes the first blocking layer(48) and the first passivation layer(42) formed on the first blocking layer, surrounding the capacitor and composed of the same material.
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申请公布号 |
KR20020013154(A) |
申请公布日期 |
2002.02.20 |
申请号 |
KR20000046615 |
申请日期 |
2000.08.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN, HYEONG GEUN;CHO, HAK JU |
分类号 |
H01L27/105;H01L21/02;H01L21/8246;H01L27/108;H01L27/115;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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