| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to form a metal contact and to omit a process for forming a metal plug or metal stud, by overcoming a high step of an insulation layer caused by a capacitor. CONSTITUTION: A gate structure(210) is formed on a semiconductor substrate(100), and the first insulation layer(300) covering the gate structure is formed. A bit line(400) is formed on the first insulation layer. The second insulation layer(500) covering the bit line is formed. A buried contact penetrates the second insulation layer, and is electrically connected to the substrate between gate structures. The second insulation layer is selectively etched to form lower contact holes(511,513,515), the bit line and a conductive pattern of the gate structure. The third insulation layer(700) inducing a void(710) in the lower contact holes is formed on the second insulation layer. A lower electrode(810) electrically connected to the buried contact is formed. A dielectric layer(830) and an upper electrode(850) are formed on the lower electrode to form the capacitor. The fourth insulation layer covering the capacitor is formed. The fourth insulation layer and the lower insulation layers are sequentially and selectively etched to form upper contact holes respectively aligned in the lower contact holes and metal contact holes exposing the upper electrode. The metal contact hole, the upper contact holes and the upper contact holes are filled to form a metal contact electrically connected to the upper electrode, the substrate, the bit line and the conductive pattern.
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