| 摘要 |
PURPOSE: A high voltage semiconductor device having high voltage isolation region is provided to make an impact ionization in an n¬+ type buried layer before in a surface region of the device in the breakdown of a double-diffusion metal-oxide-semiconductor(DMOS) transistor, by forming an n-type epitaxial layer and an n¬+ type buried layer. CONSTITUTION: An epitaxial layer(402) of the second conductivity type is formed on a semiconductor substrate(401) of the first conductivity type. The first diffusion region of the first conductivity type for isolation is formed in a horizontal DMOS transistor and in the high voltage isolation region. The second diffusion region(405) of the first conductivity type is formed on the epitaxial layer of the horizontal DMOS transistor, adjacent to the first diffusion region. A source region of the second conductivity type is formed in the second diffusion region. A drain region of the second conductivity type is formed on the epitaxial layer, separated from the source region by a predetermined interval. A resistor unit transfers a signal from the DMOS transistor to the high voltage region, formed in the high voltage region. A gate insulation layer(410) is formed on a channel region of the second diffusion region. A gate electrode(411) is formed on the gate insulation layer. A source electrode(412) is in contact with the source region. A drain electrode(413) is connected to the resistor unit through the high voltage isolation region, in contact with the drain region.
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