SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND PATTERN FORMATION METHOD

摘要

PURPOSE: A semiconductor substrate is provided to improve a pattern profile in a photolithographic process by using a nitride semiconductor substrate having a scattering portion. CONSTITUTION: A semiconductor substrate comprises a semiconductor layer(100) comprising a group III nitride as a main component. A GaN layer is used as the semiconductor layer(100). A scattering portion(100a) for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer(100). Preferably, a plurality of concave and convex parts are used as the scattering portion(100a).