METHOD FOR FABRICATING COMPLEMENTARY METAL OXIDE SEMICONDUCTOR TRANSISTOR

摘要

PURPOSE: A method for fabricating a complementary metal oxide semiconductor(CMOS) transistor is provided to prevent a short channel effect and a hot carrier effect by implanting n-type impurity ions into the entire surface of a semiconductor substrate having a p-well region and an n-well region and implanting n-type impurity ions into only the p-well region. CONSTITUTION: A well region of the first conductivity type and a well region of the second conductivity type opposite to the first conductivity type are formed on the semiconductor substrate(11). Impurity ions of the first conductivity type are firstly implanted into the entire surface of the resultant structure. Impurity ions of the first conductivity type are secondly implanted into only the well region of the second conductivity type.