METHOD FOR FORMING MOCVD-TIN THIN FILM

摘要

PURPOSE: A method for forming a TiN thin film is provided to form the TiN thin film that has a low carbon content on the thin film, a low specific resistance and superior step coverage at a relatively low temperature by depositing the TiN thin film in MOCVD(Metal Organic Chemical Vapor Deposition) using a TDEAT(Tetrakis Diethylamido Titanium) precursor. CONSTITUTION: In a method for forming a TiN thin film in which TiN is deposited on a substrate(140) rested on a susceptor(130) in the reaction chamber(110) by supplying vapor of a TDEAT precursor together with an NH3 gas into a reaction chamber, the method for forming the TiN thin film comprises the processes of maintaining a pressure of the reaction chamber to 0.5 to 3.0 Torr by supplying vapor of the TDEAT precursor and the NH3 gas into the reaction chamber so that a ratio of a vaporization rate of the TDEAT precursor and a flow rate of the NH3 gas is 1 mg/min:20 sccm-1 mg/min:100 sccm; and heating the substrate to a temperature of 300 to 400 deg.C so as to deposit the TiN thin film on the substrate.