METHOD FOR FORMING FUSE BOX OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fuse box of a semiconductor device is provided to prevent a fail occurring from a reliability test, by completely intercepting the inside of the device from external moisture. CONSTITUTION: A fuse(14) as a gate electrode is formed in a fuse box region of a semiconductor substrate(10). A mask insulation layer pattern(16) is formed on the fuse, and a nitride layer spacer(18) is formed on the sidewall of the fuse and the mask insulation layer pattern. The first interlayer dielectric is formed on the entire surface, and is etched to expose the fuse at the edge of the fuse box region. A contact pad(22) as a polycrystalline silicon layer is formed on the fuse. The second interlayer dielectric(25) which has the first metal interconnection contact plug(24) coupled to a portion for the first metal interconnection contact of the contact pad, is formed on the entire surface. The first metal interconnection(26) coupled to the first metal interconnection contact plug is formed. The third interlayer dielectric(29) having a via contact plug(28) coupled to the first metal interconnection is formed on the entire surface. The second metal interconnection(30) coupled to the via contact plug is formed.