METHOD FOR FORMING INSULATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an insulation layer of a semiconductor device is provided to maximumly prevent particles after a process for forming the insulation layer, by using oxygen plasma to heat a semiconductor substrate before the insulation layer like a high density plasma oxide layer is deposited. CONSTITUTION: The semiconductor substrate is mounted on a chuck inside a chamber of a deposition apparatus. Oxygen gas is supplied to the chamber, and the oxygen plasma is exited from the oxygen gas to heat the semiconductor substrate by using the oxygen plasma. Source gas for forming a silicon oxide is supplied to the inside of the chamber, and source plasma is excited from the source gas to deposit the insulation layer on the semiconductor substrate.