METHOD FOR FABRICATING DISPLAY APPARATUS

摘要

PURPOSE: A method for fabricating a display apparatus is provided to effectively improve uniformity of a threshold voltage of a TFT(thin film transistor) by irradiating a laser light to a polycrystalline silicon layer particularly when the TFT is used as a semiconductor device. CONSTITUTION: A linear laser light which has an energy and is to be scanned is irradiated to a semiconductor device formed on a substrate, and the substrate is rotated to irradiate to the semiconductor device a linear laser light which has a higher energy than that of the irradiated linear laser light and is to be scanned. In a semiconductor device having an analog circuit region and a remaining circuit region wherein the analog circuit region is smaller than the remaining circuit region, a linear laser light having an irradiation area(237) is irradiated to the analog circuit region without moving the irradiation area so as not to overlap the laser lights by scanning. The linear laser light to be scanned is irradiated to the remaining circuit region.