发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To enhance the detection sensitivity for a defective portion in failure analysis for a semiconductor chip. SOLUTION: Since a current value is remarkably varied in a position just above the defective portion such as a wiring short circuit 1d or an element leakage 1e, coordinates at this time are transformed into scanner coordinates to enhance the detection sensitivity for the position of the defective portion, by irradiating a micro-area on a main face 1a of the semiconductor chip 1 with an infrared ray 2 through a slit of a scanning plate, by scanning the infrared ray 2 both X-directionally and Y-directionally to heat wiring 1b micro-area by micro-area, and by monitoring the current value while corresponding to the micro-area.
申请公布号 JP2002055146(A) 申请公布日期 2002.02.20
申请号 JP20000242235 申请日期 2000.08.10
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 SAKAI TORU
分类号 G01R31/302;G01N27/00;H01L21/66;(IPC1-7):G01R31/302 主分类号 G01R31/302
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