METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to form a crystalline silicon film on a glass substrate by a method wherein a metal element for promoting crystallization of silicon is held in contact with the surface of an amorphous silicon film formed on an insulation surface and heat-treated at the crystallization temperature of the amorphous silicon film or above. CONSTITUTION: A silicon film(12) is deposited as a ground film on a glass substrate(11) and an amorphous silicon film(13) is deposited by a low-pressure thermal CVD(chemical vapor deposition) method. A nickel acetate solution which is regulated to have a prescribed concentration and comes to be a metal element source for promoting crystallization is applied on the surface of the amorphous silicon film, so that a water film of the nickel acetate solution is formed. A spin coating process is performed while an excessive nickel acetate solution is splashed. The glass substrate is disposed on a surface plate(16) having a high-precision flat surface. The glass substrate is heat-treated at the crystallization temperature of the amorphous silicon film or above and gradually cooled down at a prescribed speed.