发明名称 POSITIVE TYPE RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive type resist composition which attains enhancement in resolving power and improvement in process tolerability such as exposure margin and focal depth in lithography using a short-wavelength light source for exposure capable of ultra-microfabrication and a positive type chemical amplification resist. SOLUTION: The positive type resist composition contains (A) a compound which generates a strong acid when irradiated with active light or radiation, (B) resin which is decomposed by the action of the acid to increase its solubility in an alkali developing solution and (C) a compound which generates a carboxylic acid having a steroid structure when irradiated with active light or radiation.
申请公布号 JP2002055442(A) 申请公布日期 2002.02.20
申请号 JP20000240060 申请日期 2000.08.08
申请人 FUJI PHOTO FILM CO LTD 发明人 KODAMA KUNIHIKO
分类号 G03F7/004;C07C25/18;C07C39/367;C07C43/225;C07C323/09;C07C381/12;G03F7/039;H01L21/027 主分类号 G03F7/004
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