发明名称 |
METHOD FOR REALIZING LOW POWER DISSIPATION OF SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A method for realizing a low power dissipation of a semiconductor memory device is provided, which can reduce the power dissipation effectively by optimizing an operation of a word line and a sense amplifier by optimizing an enable and a disable control signal. CONSTITUTION: In a semiconductor memory device comprising a sensing circuit part(110) sensing a bit line sensing automatically, the method comprises the first process of detecting a phase difference between bit line output signals being output from a sense amplifier(30) according to a read operation, and the second process of disabling the word line after it is sensed if the phase difference between the bit line output signals is detected. The second process has a step of detecting the phase difference and a step of generating the word line disable signal if the phase difference is detected, and a step of disabling the word line by the sensing circuit part. The operation of the sense amplifier is disabled together.
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申请公布号 |
KR20020012655(A) |
申请公布日期 |
2002.02.20 |
申请号 |
KR20000045811 |
申请日期 |
2000.08.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEO, YUN BEOM;SON, JONG PIL |
分类号 |
G11C11/413;(IPC1-7):G11C11/413 |
主分类号 |
G11C11/413 |
代理机构 |
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主权项 |
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地址 |
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