| 摘要 |
For fabricating a field effect transistor within an active device area of a semiconductor substrate, a gate dielectric is formed on the active device area of the semiconductor substrate, and a gate structure is formed on the gate dielectric with the gate structure being comprised of a first conductive material. A drain spacer comprised of a second conductive material is formed on a first sidewall of the gate structure, and a first liner dielectric is formed between the drain spacer and the first sidewall of the gate structure and between the drain spacer and the semiconductor substrate. A source spacer comprised of the second conductive material is formed on a second sidewall of the gate structure, and a second liner dielectric is formed between the source spacer and the second sidewall of the gate structure and between the source spacer and the semiconductor substrate. Application of at least a drain threshold voltage on the drain spacer with respect to the semiconductor substrate induces charge accumulation in the semiconductor substrate under the first liner dielectric to form a drain extension of the field effect transistor. Similarly, application of at least a source threshold voltage on the source spacer with respect to the semiconductor substrate induces charge accumulation in the semiconductor substrate under the second liner dielectric to form a source extension of the field effect transistor. In this manner, the drain and source extensions of the field effect transistor are electrically induced to have a depth that is shallow regardless of thermal processes used for fabrication of the integrated circuit having the field effect transistor.
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