PHOTORESIST POLYMER, METHOD OF PRODUCING PHOTORESIST POLYMER, POLYMER, PHOTORESIST COMPOSITION, METHOD OF PHOTORESIST PATTERN FORMATION AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide photoresist polymer that is suitable for the Tips step. SOLUTION: In the photoresist composition according to this invention including the photoresist polymer represented by chemical formula (I), the protecting groups are selectively uncoupled in the area exposed to the light to form hydroxy groups. The resin composition is subjected to silylation treatment at this time whereby the formed hydroxy groups are silylated. Thus, the negative pattern is developed on the photoresist, when the silylated photoresist is subjected to the dry developing.