Die bonding device and semiconductor device

摘要

A strap-like layered resin film (4) having the same width as a semiconductor chip (2) is cut out from a layered resin film (4F) and pressurized while being heated to the temperature below the transition temperature of a resin ribbon (4b), to be bonded onto a predetermined region (1R) of a lead frame (1). Subsequently, removing a cover ribbon (4a) of non-stickiness from the film (4), the semiconductor chip (2) is bonded to the predetermined region (1R) with the resin ribbon (4b) of stickiness heated to about the transition temperature, and further pressurized. With this structure, in bonding the lead frame and the semiconductor chip with the resin film as a bonding material, it is possible to prevent emergence of a void caused by sucking air and extending-off of the bonding material.