HIGH OUTPUT SEMICONDUCTOR LASER ELEMENT HAVING ROBUST ELECTRODE STRUCTURE

摘要

A high-output semiconductor laser element has one of a Cr/Pt/Au electrode and Cr/Ni/Au electrode as a P-type electrode to provide an electrode construction that is robust with respect to heat, high in reliability and stable for a long period of time. The P-type electrode is disposed on an N-type substrate via an epitaxial layer and defines a stripe 41 having a width of 100 .mu.m or more.