| 摘要 |
A light emitting device is provided, which comprises a III-V semiconductor alloy layered structure as an active layer thereof, including N and at least one other group-V element, and at least one group-III element. The light emitting device is in use for red wavelength laser diodes having excellent temperature characteristics, visible wavelength laser diodes which may achieve emissions shorter wavelengths than 600 nm, visible region light emitting diodes having a high intensity, laser diodes for optical communication having excellent temperature characteristics, and similar light emitting devices. The III-V semiconductor alloy layered structure is provided to be used as an active layer for forming the light emitting device, which comprises first and second monatomic layers. The first monatomic layer includes a III-V semiconductor alloy containing N, at least one other group-V element, and at least one group-III element; and the second monatomic layer includes a III-V semiconductor alloy containing no N and at least one group-V element excepting N, and at least one group-III element. Through the deposition of the first and second monatomic layers in a predetermined order, the III-V semiconductor alloy structure is formed as a superlattice structure having a deduced average composition.
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